Front View - STAMOS S-PLASMA 55H Manuel D'utilisation

Plasma cutters accessories
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2
POWER SUPPLY FOR S-PLASMA 85H / S-PLASMA 85CNC
STARKSTROM: = These devices use a 3-phase connection
(400V +/- 10%).
3 PH
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EN DE
1. Grounding clamp cable
2. Plasma torch with cable
Rev. 02.03.2017
S-PLASMA 85H | S-PLASMA 85CNC

FRONT VIEW

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20. Only for S-PLASMA 85CNC
A bipolar transistor with insulated gate electrode (insulated
IGbT
gate bipolar transistor, IGBT) is a semiconductor that
is increasingly used in power electronics, as the bipolar
transistors offer certain advantages (e.g. good forwarding
characteristics, high blocking voltage, robustness in welding
equipment) and benefits characteristic of a field effect
transistor (control with virtually no power consumption).
Another advantage is a certain degree of resistance to short
circuits, as IGBT limits the load current. IGBTs are a further
development step of the vertical power MOSFETs.
Rev. 02.03.2017
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REAR VIEW
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