Rear View - STAMOS S-PLASMA 55H Manuel D'utilisation

General diagram of S-Plasma 55H connection
Power supply cord
Mass cable
Plasma cable
with torch
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EN DE
Air compressor
Pressure regulator
Cover earthing
Workpiece
Rev. 02.03.2017
S-PLASMA 55 H
FRONT VIEW
2 3
0 4
1
11
7 6 5
IGbT
IGBT:
A bipolar transistor with insulated gate electrode (insulated
gate bipolar transistor, IGBT) is a semiconductor that
is increasingly used in power electronics, as the bipolar
transistors offer certain advantages (e.g. good forwarding
characteristics, high blocking voltage, robustness in welding
equipment) and benefits characteristic of a field effect
transistor (control with virtually no power consumption).
Another advantage is a certain degree of resistance to short
circuits, as IGBT limits the load current. IGBTs are a further
development step of the vertical power MOSFETs.
NORMAL CURRENT: The device uses a 1-phase connection
(230V +/- 10%).
1 PH
Rev. 02.03.2017
EN DE

REAR VIEW

9 8
77