MS-7693 Manboard
followng "Advanced DRAM Configuraton" sub-menu to be determned by BIOS based
on the configuratons on the SPD. Selectng [Lnk] or [Unlnk] allows users to configure
the DRAM tmngs for each channel and the followng related "Advanced DRAM
Configuraton" sub-menu manually.
▶
Advanced DRAM Configuraton
Press <Enter> to enter the sub-menu.
▶
Command Rate
Ths settng controls the DRAM command rate.
▶
tCL
Controls CAS latency whch determnes the tmng delay (n clock cycles) of startng
a read command after recevng data.
▶
tRCD
Determnes the tmng of the transton from RAS (row address strobe) to CAS
(column address strobe). The less clock cycles, the faster the DRAM performance.
▶
tRP
Controls number of cycles for RAS (row address strobe) to be allowed to pre-charge.
If nsufficent tme s allowed for RAS to accumulate before DRAM refresh, the DRAM
may fal to retan data. Ths tem apples only when synchronous DRAM s nstalled
n the system.
▶
tRAS
Determnes the tme RAS (row address strobe) takes to read from and wrte to
memory cell.
▶
tRFC
Ths settng determnes the tme RFC takes to read from and wrte to a memory
cell.
▶
tWR
Determnes mnmum tme nterval between end of wrte data burst and the start of a
pre-charge command. Allows sense amplfiers to restore data to cell.
▶
tWTR
Determnes mnmum tme nterval between the end of wrte data burst and the start
of a column-read command; allows I/O gatng to overdrve sense amplfies before
read command starts.
▶
tRRD
Specfies the actve-to-actve delay of dfferent banks.
▶
tRTP
Tme nterval between a read and a precharge command.
▶
tFAW
Ths tem s used to set the tFAW (four actvate wndow delay) tmng.
▶
tWCL
Ths tem s used to set the tWCL (Wrte CAS Latency) tmng.
▶
tCKE
Ths tem s used to set the Pulse Wdth for DRAM module.
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