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S-CUTTER 90:
IGbT
IGBT:
A bipolar transistor with insulated gate electrode (insulated
gate bipolar transistor, IGBT) is a semiconductor that is incre-
asingly used in power electronics, as the bipolar transistors
offer certain advantages (e.g. good forwarding characteristics,
high blocking voltage, robustness in welding equipment) and
benefits characteristic of a field effect transistor (control
with virtually no power consumption). Another advantage is
a certain degree of resistance to short circuits, as IGBT limits
the load current. IGBTs are a further development step of the
vertical power MOSFETs.
Accessories:
1. Plasma torch P80 - 5m.
2. Grounding clamp cable - 3m.
3. Electrode 1 pcs.
4. Nozzle 1 pcs.
5. Gas hose with clips.
EN
Rev. 26.04.2019
34
Parameter
S-CUTTER 50 S-CUTTER 70 S- CUTTER 70 3PH
MOSFET / IGBT MOSFET
MOSFET
Power supply
1 Phase
1 Phase
(V)
230V±10%
230V±10%
Rated input
6.6
9.9
power (KVA)
No-load voltage
244
266
(V)
Cutting current
10-50
20-70
(A)
Rated input cur-
28.7
43.3
rent (A)
Duty cycle (%)
60
60
Current (A)
38.7
54.2
at Duty Cycle
100%
Rev. 26.04.2019
EN
MODEL
S-CUTTER 90
MOSFET
IGBT
3 Phase AC400V +/-
3 Phase
10%
AC400V +/-
10%
4.2
5.8
251
233
20-70
20-90
10.6
14.7
60
60
54.2
69.7
35
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