MSI 800G-E45 Serie Mode D'emploi page 44

MS-7576 Mainboard
▶ tRRD
When the DRAM Timing Mode sets to [DCT 0], [DCT1] or [Both], the field is adjust-
able. Specifies the active-to-active delay of different banks.
▶ tWTR
When the DRAM Timing Mode sets to [DCT 0], [DCT1] or [Both], the field is adjust-
able. This item controls the Write Data In to Read Command Delay memory timing.
This constitutes the minimum number of clock cycles that must occur between the
last valid write operation and the next read command to the same internal bank of
the DDR device.
▶ tRFC0~3
When the DRAM Timing Mode sets to [DCT 0], [DCT1] or [Both], these fields are
adjustable. These settings determine the time RFC take to read from and write to
memory cells.
▶ tWRTTO
When the DRAM Timing Mode sets to [DCT 0], [DCT1] or [Both], these fields
are adjustable. Timing of Read to Write turnaround for data; the minimum cycle
time between command last clock of CAS read operation to next command write
operation. If you set this item smaller, system will run faster but might be more
unstable. Please set it depends on memory module.
▶ tWRRD
When the DRAM Timing Mode sets to [DCT 0], [DCT1] or [Both], these fields are
adjustable. Timing of Write to Read; the minimum cycle time from last clock of first
virtual CAS write-burst operation to a following one read-burst operation for different
chip or DIMM.If you set this item smaller, system will run faster but might be more
unstable.Please set it depends on memory module.
▶ tWRWR
When the DRAM Timing Mode sets to [DCT 0], [DCT1] or [Both], these fields are
adjustable. Timing of Write to Write; the minimum cycle time from last clock of first
virtual CAS write-burst operation to a following write-burst peration that changed the
enabled terminator.If you set this item smaller, system will run faster but might be
more unstable. Please set it depends on memory module.
▶ tRDRD
When the DRAM Timing Mode sets to [DCT 0], [DCT1] or [Both], these fields are
adjustable. Timing of Read to Read; the minimum cycle time from last clock of a first
virtual CAS read-burst operation to a following one read-burst operation for different
chip or DIMM. If you set this itemsmaller, system will run faster but might be more
unstable.Please set it depends on memory module.
▶ DRAM Drive Strength
This feature allows you to control the memory data bus' signal strength. Increasing
the drive strength of the memory bus can increase stability during overclocking.
▶ DRAM Advance Control
This field has the capacity to automatically detect the advanced DRAM timing. If
you set this field to [DCT 0], [DCT 1] or [Both], some fields will appear and
selectable.
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