Table des Matières
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Annexe 5 : SPECIFICATIONS TECHNIQUES
Température de référence: 25°C
Paramètre
Peak test current across unknown
Peak test voltage across unknown
Measurable transistor gain H
Transistor H
accuracy
FE
Transistor V
accuracy
BE
V
for Germanium identification
BE
V
for Silicon identification
BE
V
for Darlington identification
BE
Transistor collector-emitter test
current
Transistor collector-emitter test
current
Acceptable collector leakage
Base-emitter shunt resistor
threshold
MOSFET gate threshold range
MOSFET gate threshold accuracy
MOSFET drain-source test
current
MOSFET maximum gate current
JFET R
range
DSON
JFET R
accuracy
DSON
JFET I
range
DSS
JFET I
accuracy
DSS
JFET V
range
TO
Thyristor/Triac gate test current
Thyristor/Triac load test current
Diode limiting resistor #1
Diode limiting resistor #2
Diode forward voltage accuracy
Min.
-12mA
-5.1V
5
FE
0.1V
0.5V
1.0V
0.25mA
0.1V
1Ω
0.2mA
-20V
AS4002P, manuel d'utilisation
15
Typ.
Max.
12mA
5.1V
999
±2% ±2
±2%
±20mV
0.5V
1.0V
2.0V
12mA
2.0mA
0.5mA
50kΩ
4.9V
±2%
±20mV
2mA
1µA
999Ω
±5%
±10Ω
100mA
±5%
±0.1mA
20V
10mA
10mA
400Ω
10kΩ
±2%
±20mV
Notes
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Table des Matières
