MSI H61I-E35 Mode D'emploi page 20

oC Genie Button operation
this field is used to enable/ disable oC Genie function.
dRaM Frequency
this setting controls the ratio of memory frequency to enable the memory to run at
different frequency combinations.
adjusted dRaM Frequency
it shows the adjusted dRaM frequency. Read-only.
dRaM timing Mode
Select whether dRaM timing is controlled by the SPd (Serial Presence detect)
eePRoM on the dRaM module. Setting to [auto] enables dRaM timings and the
following "advanced dRaM Configuration" sub-menu to be determined by BioS
based on the configurations on the SPd. Selecting [Manual] allows users to con-
figure the dRaM timings and the following related "advanced dRaM Configura-
tion" sub-menu manually.
advanced dRaM Configuration
Press <enter> to enter the sub-menu. in this sub-menu you can adjust the ad-
vanced dRaM timing.
Command Rate
this setting controls the dRaM command rate.
tCL
this controls the CaS latency, which determines the timing delay (in clock
cycles) before SdRaM starts a read command after receiving it.
tRCd
When dRaM is refreshed, both rows and columns are addressed separately.
this setup item allows you to determine the timing of the transition from RaS
(row address strobe) to CaS (column address strobe). the less the clock cy-
cles, the faster the dRaM performance.
tRP
this setting controls the number of cycles for Row address Strobe (RaS) to be
allowed to precharge. if insufficient time is allowed for the RaS to accumulate
its charge before dRaM refresh, refreshing may be incomplete and dRaM may
fail to retain data. this item applies only when synchronous dRaM is installed
in the system.
tRaS
this setting determines the time RaS takes to read from and write to memory
cell.
tRFC
this setting determines the time RFC takes to read from and write to a memory
cell.
tWR
Minimum time interval between end of write data burst and the start of a pre-
charge command. allows sense amplifiers to restore data to cells.
20
All manuals and user guides at all-guides.com