MSI Z68A-GD80 Serie Mode D'emploi page 42

MS-7672 Mainboard MS-7672 Mainboard
▶ Internal PLL Overvoltage
This item are used to adjust the PLL voltage.
▶ EIST
The Enhanced Intel SpeedStep technology allows you to set the performance level of
the microprocessor whether the computer is running on battery or AC power. This field
will appear after you installed the CPU which supports speedstep technology.
▶ Intel Turbo Boost
This item will appear when you install a CPU with Intel Turbo Boost technology. This
item is used to enable/ disable Intel Turbo Boost technology. It can scale processor
frequency higher dynamically when applications demand more performance and TDP
headroom exists. It also can deliver seamless power scalability (Dynamically scale up,
Speed-Step Down). It is the Intel newly technology within newly CPU.
▶ DRAM Frequency
This item allows you to adjust the DRAM frequency. Please note the overclocking be-
havior is not guaranteed.
▶ Adjusted DRAM Frequency
It shows the adjusted DRAM frequency. Read-only.
▶ DRAM Timing Mode
Select whether DRAM timing is controlled by the SPD (Serial Presence Detect) EE-
PROM on the DRAM module. Setting to [Auto] enables DRAM timings and the following
"Advanced DRAM Configuration" sub-menu to be determined by BIOS based on the
configurations on the SPD. Selecting [Link] or [Unlink] allows users to configure the
DRAM timings and the following related "Advanced DRAM Configuration" sub-menu
manually.
▶ Advanced DRAM Configuration
Press <Enter> to enter the sub-menu.
▶ Command Rate
This setting controls the DRAM command rate.
▶ tCL
This controls the CAS latency, which determines the timing delay (in clock cycles)
before SDRAM starts a read command after receiving it.
▶ tRCD
When DRAM is refreshed, both rows and columns are addressed separately. This
setup item allows you to determine the timing of the transition from RAS (row ad-
dress strobe) to CAS (column address strobe). The less the clock cycles, the faster
the DRAM performance.
▶ tRP
This setting controls the number of cycles for Row Address Strobe (RAS) to be
allowed to precharge. If insufficient time is allowed for the RAS to accumulate its
charge before DRAM refresh, refreshing may be incomplete and DRAM may fail
to retain data. This item applies only when synchronous DRAM is installed in the
system.
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